PART |
Description |
Maker |
SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET 600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 600V N-Channel B-FET / Substitute of SSU2N60A 600V N-Channel B-FET / Substitute of SSR2N60A
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
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IRF[International Rectifier] International Rectifier, Corp.
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FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
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http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
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IRFIBC40G IRFIBC40 IRFIBC40GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=3.5A)
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IRF[International Rectifier]
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STY25NA60 6064 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N-CHANNEL Power MOSFET
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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FGB30N6S2D FGH30N6S2D FGP30N6S2D FGB30N6S2DT |
Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC :3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
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IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
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IRF[International Rectifier]
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IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
International Rectifier, Corp.
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